MTD6N15
MOSFET. Datasheet pdf. Equivalent
Type Designator: MTD6N15
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 180(max)
nS
Cossⓘ -
Output Capacitance: 500(max)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3
Ohm
Package:
DPAK
MTD6N15
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTD6N15
Datasheet (PDF)
0.1. Size:231K motorola
mtd6n15r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD6N15/DDesigner's Data SheetMTD6N15Power Field Effect TransistorDPAK for Surface MountNChannel EnhancementMode Silicon GateTMOS POWER FETThis TMOS Power FET is designed for high speed, low loss6.0 AMPERESpower switching applications such as switching regulators, convert-150 VOLTSers, solenoid and re
0.2. Size:70K onsemi
mtd6n15-d mtd6n15t4gv mtd6n15t4 mtd6n15t4g.pdf
MTD6N15Power Field Effect TransistorDPAK for Surface MountN-Channel Enhancement-Mode Silicon GateThis TMOS Power FET is designed for high speed, low loss powerswitching applications such as switching regulators, converters,http://onsemi.comsolenoid and relay drivers.V(BR)DSS RDS(on) MAX ID MAXFeatures150 V 0.3 W 6.0 A Silicon Gate for Fast Switching Speeds Low RDS(
0.3. Size:846K cn vbsemi
mtd6n15t4g.pdf
MTD6N15T4Gwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATIN
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