All MOSFET. MTD6N15 Datasheet

 

MTD6N15 MOSFET. Datasheet pdf. Equivalent

Type Designator: MTD6N15

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 6 A

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: DPAK4

MTD6N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MTD6N15 Datasheet (PDF)

1.1. mtd6n15r.pdf Size:231K _motorola

MTD6N15
MTD6N15

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N15/D Designer's? Data Sheet MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This TMOS Power FET is designed for high speed, low loss 6.0 AMPERES power switching applications such as switching regulators, convert- 150 VOLTS ers, solenoid and relay drive

1.2. mtd6n15-d.pdf Size:70K _onsemi

MTD6N15
MTD6N15

MTD6N15 Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, http://onsemi.com solenoid and relay drivers. V(BR)DSS RDS(on) MAX ID MAX Features 150 V 0.3 W 6.0 A • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0

 4.1. mtd6n10e.pdf Size:211K _motorola

MTD6N15
MTD6N15

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD6N10E/D Designer's? Data Sheet MTD6N10E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 6.0 AMPERES 100 VOLTS This advanced TMOS E–FET is designed to withstand high RDS(on) = 0.400 OHM energy in the avalanche and commutat

Datasheet: MMBFU310L , MMDF1N05E , MMFT960 , MMSF3P02HD , MPF4393 , MTB2P50E , MTB50P03HDL , MTD5P06V , J113 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , NCV8402D .

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