MTW32N20E MOSFET. Datasheet pdf. Equivalent
Type Designator: MTW32N20E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO247AE
MTW32N20E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MTW32N20E Datasheet (PDF)
mtw32n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20e.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
mtw32n20e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor MTW32N20EFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
mtw32n20erev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTW32N20E/DDesigner's Data SheetMTW32N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES200 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.075 OHMenergy in t
mtw32n20eg.pdf
MTW32N20EPower MOSFET32 Amps, 200 VoltsN-Channel TO-247This advanced Power MOSFET is designed to withstand highhttp://onsemi.comenergy in the avalanche and commutation modes. The new energyefficient design also offers a drain-to-source diode with a fast32 AMPERES, 200 VOLTSrecovery time. Designed for low voltage, high speed switchingRDS(on) = 75 mWapplications in power sup
mtw32n25e.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in
mtw32n25erev2.pdf
MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTW32N25E/DDesigner's Data SheetMTW32N25ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorTO-247 with Isolated Mounting HoleTMOS POWER FETNChannel EnhancementMode Silicon Gate 32 AMPERES 250 VOLTSThis advanced TMOS EFET is designed to withstand highRDS(on) = 0.08 OHMenergy in
Datasheet: MTB2P50E , MTB50P03HDL , MTD5P06V , MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , AON7403 , NCV8401 , NCV8402 , NCV8402D , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 .
History: IRL3103L
History: IRL3103L
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