MTW32N20E - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup

INCHANGE Semiconductor isc N-Channel MOSFET Transistor MTW32N20E FEATURES With TO-247 packaging With low gate drive requirements Low switching loss Low on-state resistance Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N20E/D Designer's Data Sheet MTW32N20E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 200 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.075 OHM energy in t

MTW32N20E Power MOSFET 32 Amps, 200 Volts N-Channel TO-247 This advanced Power MOSFET is designed to withstand high http //onsemi.com energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast 32 AMPERES, 200 VOLTS recovery time. Designed for low voltage, high speed switching RDS(on) = 75 mW applications in power sup

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N25E/D Designer's Data Sheet MTW32N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 250 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.08 OHM energy in

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW32N25E/D Designer's Data Sheet MTW32N25E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N Channel Enhancement Mode Silicon Gate 32 AMPERES 250 VOLTS This advanced TMOS E FET is designed to withstand high RDS(on) = 0.08 OHM energy in