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NCV8402D Spec and Replacement


   Type Designator: NCV8402D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 42 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 14 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: SO8

 NCV8402D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCV8402D Specs

 ..1. Size:147K  onsemi
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NCV8402D

NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh ... See More ⇒

 7.1. Size:152K  onsemi
 ncv8402.pdf pdf_icon

NCV8402D

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe... See More ⇒

 7.2. Size:92K  onsemi
 ncv8402a ncv8402astt1g.pdf pdf_icon

NCV8402D

NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm... See More ⇒

 7.3. Size:118K  onsemi
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NCV8402D

NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D/AD is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suita... See More ⇒

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Detailed specifications: MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , IRF1405 , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z .

Keywords - NCV8402D MOSFET specs

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