NCV8402D datasheet, аналоги, основные параметры
Наименование производителя: NCV8402D 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1.62 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 42 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 14 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: SO8
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Аналог (замена) для NCV8402D
- подборⓘ MOSFET транзистора по параметрам
NCV8402D даташит
ncv8402d.pdf
NCV8402D Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suitable for harsh
ncv8402.pdf
NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe
ncv8402a ncv8402astt1g.pdf
NCV8402, NCV8402A Self-Protected Low Side Driver with Temperature and Current Limit NCV8402/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, www.onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS automotive environm
ncv8402ad.pdf
NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit http //onsemi.com NCV8402D/AD is a dual protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and V(BR)DSS integrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYP ID MAX (Clamped) device offers protection and is suita
Другие IGBT... MTD6N15, MTD6N20E, MTP20N15E, MTP2P50E, MTP50P03HDL, MTW32N20E, NCV8401, NCV8402, IRL3713, NCV8403, NCV8405, NCV8406, NCV8440, NCV8450, NDD02N60Z, NDD03N50Z, NDD03N60Z
Параметры MOSFET. Взаимосвязь и компромиссы
History: JMSL0615PGDQ | AGM15T06C
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