NCV8402D Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NCV8402D
Маркировка: V8402D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.62 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 42 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 14 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
Тип корпуса: SO8
- подбор MOSFET транзистора по параметрам
NCV8402D Datasheet (PDF)
ncv8402d.pdf

NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh
ncv8402.pdf

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe
ncv8402a ncv8402astt1g.pdf

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm
ncv8402ad.pdf

NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita
Другие MOSFET... MTD6N15 , MTD6N20E , MTP20N15E , MTP2P50E , MTP50P03HDL , MTW32N20E , NCV8401 , NCV8402 , IRF9640 , NCV8403 , NCV8405 , NCV8406 , NCV8440 , NCV8450 , NDD02N60Z , NDD03N50Z , NDD03N60Z .
History: AFN4440W | STW24NM60N | FQPF3N80 | AFN6530S | IRLMS1902 | FQPF3N80CYDTU
History: AFN4440W | STW24NM60N | FQPF3N80 | AFN6530S | IRLMS1902 | FQPF3N80CYDTU



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