NDF08N50Z Datasheet. Specs and Replacement

Type Designator: NDF08N50Z  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220FP

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NDF08N50Z datasheet

 ..1. Size:140K  onsemi
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NDF08N50Z

NDF08N50Z, NDP08N50Z N-Channel Power MOSFET 500 V, 0.69 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (TYP) @ 3.6 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 500 V 0.69 W Rating Symbol NDF08N50Z NDP08N50Z Unit Drain-to-Source Voltage VDSS 500 V N... See More ⇒

 8.1. Size:137K  1
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NDF08N50Z

DataSheet.in NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (MAX) @ 3.5 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 600 V 0.95 W Rating Symbol NDF08N60Z NDP08N60Z Unit Drain-to-Source Voltage... See More ⇒

 8.2. Size:112K  onsemi
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NDF08N50Z

NDF08N60Z, NDP08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features Low ON Resistance Low Gate Charge http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS Compliant VDSS RDS(ON) (MAX) @ 3.5 A ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) 600 V 0.95 W Rating Symbol NDF08N60Z NDP08N60Z Unit Drain-to-Source Voltage VDSS 600 V N... See More ⇒

Detailed specifications: NDF03N60Z, NDF04N60Z, FDMA910PZ, NDF04N62Z, NDF05N50Z, NDF06N60Z, FDMC8327L, NDF06N62Z, IRF740, NDF08N60Z, NDF10N60Z, FDMS7678, NDF10N62Z, NDF11N50Z, NIC9N05TS1, NID6002N, NID9N05CL

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