NTA7002N Specs and Replacement
Type Designator: NTA7002N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.154 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 10 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
NTA7002N substitution
- MOSFET ⓘ Cross-Reference Search
NTA7002N datasheet
nta7002n nvta7002n.pdf
NTA7002N, NVTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 http //onsemi.com Features Low Gate Charge for Fast Switching RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint V(BR)DSS Typ @ VGS (Note 1) 1.4 W @ 4.5 V ESD Protected Gate 30 V 154 mA NV Prefix for Automotive and Other Applications Requiring Unique 2.3 W @ 2.5 V Site and ... See More ⇒
nta7002n-d.pdf
NTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 http //onsemi.com Features Low Gate Charge for Fast Switching RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint V(BR)DSS Typ @ VGS (Note 1) 1.4 W @ 4.5 V ESD Protected Gate 30 V 154 mA Pb-Free Package is Available 2.3 W @ 2.5 V Applications 3 Power Management Load Switch Le... See More ⇒
nta7002nt1 nvta7002n.pdf
NTA7002N, NVTA7002N Small Signal MOSFET 30 V, 154 mA, Single, N-Channel, Gate ESD Protection, SC-75 http //onsemi.com Features Low Gate Charge for Fast Switching RDS(on) ID MAX Small 1.6 x 1.6 mm Footprint V(BR)DSS Typ @ VGS (Note 1) 1.4 W @ 4.5 V ESD Protected Gate 30 V 154 mA NV Prefix for Automotive and Other Applications Requiring Unique 2.3 W @ 2.5 V Site and ... See More ⇒
Detailed specifications: NID6002N, NID9N05CL, NIF9N05CL, NIMD6001, FDD4N60NZ, NTA4001N, NTA4151P, NTA4153N, IRF3710, NTB25P06, NTB35N15, NTB45N06, NTB45N06L, NTB5404N, NTB5405N, NTB5426N, NTB5605P
Keywords - NTA7002N MOSFET specs
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History: SFW280N600C4
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