All MOSFET. NTB35N15 Datasheet

 

NTB35N15 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTB35N15
   Marking Code: 35N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 37 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: D2PAK

 NTB35N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTB35N15 Datasheet (PDF)

 ..1. Size:80K  onsemi
 ntb35n15 ntb35n15g.pdf

NTB35N15 NTB35N15

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD

 ..2. Size:80K  onsemi
 ntb35n15.pdf

NTB35N15 NTB35N15

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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