NTB35N15 Datasheet and Replacement
Type Designator: NTB35N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 37 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: D2PAK
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NTB35N15 Datasheet (PDF)
ntb35n15 ntb35n15g.pdf

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD
ntb35n15.pdf

NTB35N15Power MOSFET37 Amps, 150 VoltsN-Channel Enhancement-Mode D2PAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a Discrete37 AMPERES, 150 VOLTSFast Recovery Diode50 mW @ VGS = 10 V Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the D2PAK PackageD
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMM11N80M3 | IRFI7536G | FDMS9620S | AM2314NE | SIF7N60D
Keywords - NTB35N15 MOSFET datasheet
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History: WMM11N80M3 | IRFI7536G | FDMS9620S | AM2314NE | SIF7N60D



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