NTB5605P Datasheet and Replacement
Type Designator: NTB5605P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 13 nC
tr ⓘ - Rise Time: 122 nS
Cossⓘ - Output Capacitance: 211 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: D2PAK
NTB5605P substitution
NTB5605P Datasheet (PDF)
ntb5605p ntbv5605.pdf

NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo
ntb5605pg.pdf

NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo
ntb5605-p.pdf

NTB5605P, NTB5605Power MOSFET-60 Volt, -18.5 AmpP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes Pb-Free Packages are Available -60 V 120 mW @ -5.0 V -18.5 AApplicationsP-Channel Power SuppliesD PWM Motor Control Converters Power Management
Datasheet: NTA7002N , NTB25P06 , NTB35N15 , NTB45N06 , NTB45N06L , NTB5404N , NTB5405N , NTB5426N , AON7408 , NTB60N06 , NTB6410AN , NTB6411AN , NTB6412AN , NTB6413AN , NTD110N02R , NTD14N03R , NTD18N06L .
Keywords - NTB5605P MOSFET datasheet
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