NTB5605P Specs and Replacement
Type Designator: NTB5605P
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 88 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 122 nS
Cossⓘ - Output Capacitance: 211 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: D2PAK
NTB5605P substitution
- MOSFET ⓘ Cross-Reference Search
NTB5605P datasheet
ntb5605p ntbv5605.pdf
NTB5605P, NTBV5605 Power MOSFET -60 V, -18.5 A P-Channel, D2PAK http //onsemi.com Features Designed for Low RDS(on) V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605 -60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS Compliant P-Channel Applications D Power Supplies PWM Mo... See More ⇒
ntb5605pg.pdf
NTB5605P, NTBV5605 Power MOSFET -60 V, -18.5 A P-Channel, D2PAK http //onsemi.com Features Designed for Low RDS(on) V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605 -60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS Compliant P-Channel Applications D Power Supplies PWM Mo... See More ⇒
ntb5605-p.pdf
NTB5605P, NTB5605 Power MOSFET -60 Volt, -18.5 Amp P-Channel, D2PAK http //onsemi.com Features Designed for Low RDS(on) V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes Pb-Free Packages are Available -60 V 120 mW @ -5.0 V -18.5 A Applications P-Channel Power Supplies D PWM Motor Control Converters Power Management ... See More ⇒
Detailed specifications: NTA7002N, NTB25P06, NTB35N15, NTB45N06, NTB45N06L, NTB5404N, NTB5405N, NTB5426N, IRFP250N, NTB60N06, NTB6410AN, NTB6411AN, NTB6412AN, NTB6413AN, NTD110N02R, NTD14N03R, NTD18N06L
Keywords - NTB5605P MOSFET specs
NTB5605P cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AOL1704
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