NTB5605P
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB5605P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 88
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 18.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 13
nC
trⓘ - Rise Time: 122
nS
Cossⓘ -
Output Capacitance: 211
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
D2PAK
NTB5605P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB5605P
Datasheet (PDF)
..1. Size:138K onsemi
ntb5605p ntbv5605.pdf 
NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo
0.1. Size:135K onsemi
ntb5605pg.pdf
NTB5605P, NTBV5605Power MOSFET-60 V, -18.5 AP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes AEC Q101 Qualified - NTBV5605-60 V 120 mW @ -5.0 V -18.5 A These Devices are Pb-Free and are RoHS CompliantP-ChannelApplicationsD Power Supplies PWM Mo
7.1. Size:89K onsemi
ntb5605-p.pdf
NTB5605P, NTB5605Power MOSFET-60 Volt, -18.5 AmpP-Channel, D2PAKhttp://onsemi.comFeatures Designed for Low RDS(on)V(BR)DSS RDS(on) TYP ID MAX Withstands High Energy in Avalanche and Commutation Modes Pb-Free Packages are Available -60 V 120 mW @ -5.0 V -18.5 AApplicationsP-Channel Power SuppliesD PWM Motor Control Converters Power Management
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