NTD4813N Datasheet and Replacement
Type Designator: NTD4813N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 19.3 nS
Cossⓘ - Output Capacitance: 201 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DPAK
NTD4813N substitution
NTD4813N Datasheet (PDF)
ntd4813n-1g ntd4813n-d.pdf

NTD4813NPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications13 m @10V CPU Power Delivery30 V40 A24 m @4.5 V DC--DC Co
ntd4813nh-1g.pdf

NTD4813NH, NVD4813NHPower MOSFET30 V, 40 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Comp
ntd4813nh-d.pdf

NTD4813NHPower MOSFET30 V, 40 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices13 m @10VApplications30 V40 A25.9 m @4.5 V CPU Power Delivery
Datasheet: NTD40N03R , NTD4302 , NTD4804N , NTD4805N , NTD4806N , NTD4808N , NTD4809N , NTD4810N , IRF1407 , NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N , NTD4863N .
History: NTD4815N
Keywords - NTD4813N MOSFET datasheet
NTD4813N cross reference
NTD4813N equivalent finder
NTD4813N lookup
NTD4813N substitution
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History: NTD4815N



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