NTGS3130N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTGS3130N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Drain Current |Id|: 5.6 A
Total Gate Charge (Qg): 13.2 nC
Maximum Drain-Source On-State Resistance (Rds): 0.019 Ohm
Package: TSOP6
NTGS3130N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTGS3130N Datasheet (PDF)
1.1. ntgs3130n.pdf 
Size:87K _onsemi
NTGS3130N Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 Features Leading Edge Trench Technology for Low On Resistance http://onsemi.com Low Gate Charge for Fast Switching Small Size (3 x 2.75 mm) TSOP-6 Package V(BR)DSS RDS(on) mAX ID Max This is a Pb-Free Device 24 mW @ 4.5 V 5.6 A Applications 20 V DC-DC Converters 32 mW @ 2.5 V 4.9 A Lithium Ion Battery Applicati
3.1. ntgs3136p-d.pdf Size:113K _onsemi
NTGS3136P Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 Features Low RDS(on) in TSOP-6 Package 1.8 V Gate Rating http://onsemi.com Fast Switching This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 25 mW @ -4.5 V -5.1 A Optimized for Battery and Load Management Applications in -20 V 32 mW @ -2.5 V -4.5 A Portable Equipment 41 mW @ -1.8 V -2.5 A High
5.1. ntgs3443t1.pdf Size:103K _onsemi
NTGS3443T1 Power MOSFET 4.4 Amps, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 4.4 AMPERES Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 65 mW Pb-Free Package is Available Applications P-Channel 1 2 5 6 Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Tele
5.2. ntgs3446.pdf Size:136K _onsemi
NTGS3446 Power MOSFET 20 V, 5.1 A Single N-Channel, TSOP6 Features Ultra Low RDS(on) http://onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive V(BR)DSS RDS(on) TYP ID MAX Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified 20 V 36 mW @ 4.5 V 5.1 A IDSS Specified at Elevated Temperature Pb-Free Package is Available N-Channel Appl
5.3. ntgs3441p-d.pdf Size:64K _onsemi
NTGS3441P Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 Features Ultra Low RDS(on) to Improve Conduction Loss Low Gate Charge to Improve Switching Losses http://onsemi.com TSOP-6 Surface Mount Package This is a Pb-Free Device V(BR)DSS RDS(ON) TYP ID MAX Applications 91 mW @ 4.5 V High Side Switch in DC-DC Converters -20 V 144 mW @ 2.7 V -3.16 A Battery Management 1
5.4. ntgs3455t1.pdf Size:104K _onsemi
NTGS3455T1 MOSFET -3.5 Amps, -30 Volts P-Channel TSOP-6 Features http://onsemi.com Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -30 V 100 mW @ -10 V -3.5 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products, i.e.: Cellul
5.5. ntgs3441t1.pdf Size:136K _onsemi
NTGS3441T1 Power MOSFET 1 Amp, 20 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) 1 AMPERE Higher Efficiency Extending Battery Life 20 VOLTS Miniature TSOP-6 Surface Mount Package RDS(on) = 90 mW Pb-Free Package is Available Applications P-Channel Power Management in Portable and Battery-Powered Products, 1 2 5 6 i.e.: Cellular and Cordless Telephones
5.6. ntgs3433t1.pdf Size:132K _onsemi
NTGS3433T1 MOSFET -3.3 Amps, -12 Volts P-Channel TSOP-6 http://onsemi.com Features Ultra Low RDS(on) V(BR)DSS RDS(on) TYP ID Max Higher Efficiency Extending Battery Life -12 V 75 mW @ -4.5 V -3.3 A Miniature TSOP-6 Surface Mount Package Pb-Free Package is Available P-Channel 1 2 5 6 Applications DRAIN Power Management in Portable and Battery-Powered Products, i.e.: Cell
Datasheet: NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , NTGD4161P , NTGD4167C , IRFZ44 , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N .
