All MOSFET. NTHD3100C Datasheet

 

NTHD3100C Datasheet and Replacement


   Type Designator: NTHD3100C
   Marking Code: C9*
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2(1.5) V
   |Id| ⓘ - Maximum Drain Current: 2.9(3.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 2.3(7.4) nC
   tr ⓘ - Rise Time: 10.7(11.7) nS
   Cossⓘ - Output Capacitance: 80(100) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: CHIPFET8
 

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NTHD3100C Datasheet (PDF)

 ..1. Size:148K  onsemi
 nthd3100c.pdf pdf_icon

NTHD3100C

AND PIN ANTHD3100CPower MOSFET20 V, +3.9 A /-4.4 A,Complementary ChipFETtFeatureshttp://onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics58 mW @ 4.5 VN-Channel Trench P-Channel for Low On Resistance3.9 A20 V77 mW @ 2

 7.1. Size:116K  onsemi
 nthd3101ft1g nthd3101ft3.pdf pdf_icon

NTHD3100C

NTHD3101FPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with4.1 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indepe

 7.2. Size:66K  onsemi
 nthd3101f.pdf pdf_icon

NTHD3100C

NTHD3101FPower MOSFET andSchottky Diode-20 V, Fetky, P-Channel, -3.2 A, with 2.2ASchottky Barrier Diode, ChipFET]Featureshttp://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsV(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E

 7.3. Size:95K  onsemi
 nthd3102c.pdf pdf_icon

NTHD3100C

NTHD3102CPower MOSFETComplementary, 20 V, +5.5 A /-4.2 A,ChipFETtFeatures Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsID MAXV(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve

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Datasheet: NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , AON6414A , NTHD3101F , NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P .

Keywords - NTHD3100C MOSFET datasheet

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