NTHD3100C - аналоги, параметры транзистора - Справочник транзисторов

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..1. Size:148K onsemi
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AND PIN A NTHD3100C Power MOSFET 20 V, +3.9 A /-4.4 A, Complementary ChipFETt Features http //onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics 58 mW @ 4.5 V N-Channel Trench P-Channel for Low On Resistance 3.9 A 20 V 77 mW @ 2

7.1. Size:116K onsemi
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NTHD3101F Power MOSFET and Schottky Diode -20 V, FETKYt, P-Channel, -4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt http //onsemi.com Features Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package V(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics 64 mW @ -4.5 V -20 V -4.4 A Indepe

7.2. Size:66K onsemi
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NTHD3101F Power MOSFET and Schottky Diode -20 V, Fetky, P-Channel, -3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features http //onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode MOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics V(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E

7.3. Size:95K onsemi
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NTHD3102C Power MOSFET Complementary, 20 V, +5.5 A /-4.2 A, ChipFETt Features Complementary N-Channel and P-Channel MOSFET http //onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal Characteristics ID MAX V(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve

Другие MOSFET... NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , IRFB4227 , NTHD3101F , NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P .