NTHD3101F Datasheet and Replacement
Type Designator: NTHD3101F
Marking Code: D1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 7.4 nC
tr ⓘ - Rise Time: 11.7 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: CHIPFET8
NTHD3101F substitution
NTHD3101F Datasheet (PDF)
nthd3101f.pdf
NTHD3101FPower MOSFET andSchottky Diode-20 V, Fetky, P-Channel, -3.2 A, with 2.2ASchottky Barrier Diode, ChipFET]Featureshttp://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsV(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E
nthd3101ft1g nthd3101ft3.pdf
NTHD3101FPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with4.1 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indepe
nthd3100c.pdf
AND PIN ANTHD3100CPower MOSFET20 V, +3.9 A /-4.4 A,Complementary ChipFETtFeatureshttp://onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics58 mW @ 4.5 VN-Channel Trench P-Channel for Low On Resistance3.9 A20 V77 mW @ 2
nthd3102c.pdf
NTHD3102CPower MOSFETComplementary, 20 V, +5.5 A /-4.2 A,ChipFETtFeatures Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsID MAXV(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Keywords - NTHD3101F MOSFET datasheet
NTHD3101F cross reference
NTHD3101F equivalent finder
NTHD3101F lookup
NTHD3101F substitution
NTHD3101F replacement
