NTHD3133PF
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTHD3133PF
Marking Code: DA*
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 3.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.4
nC
trⓘ - Rise Time: 11.7
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package: CHIPFET8
NTHD3133PF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTHD3133PF
Datasheet (PDF)
..1. Size:92K onsemi
nthd3133pf nthd3133pft1g.pdf
NTHD3133PFPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with3.7 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indep
8.1. Size:116K onsemi
nthd3101ft1g nthd3101ft3.pdf
NTHD3101FPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with4.1 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indepe
8.2. Size:66K onsemi
nthd3101f.pdf
NTHD3101FPower MOSFET andSchottky Diode-20 V, Fetky, P-Channel, -3.2 A, with 2.2ASchottky Barrier Diode, ChipFET]Featureshttp://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsV(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E
8.3. Size:148K onsemi
nthd3100c.pdf
AND PIN ANTHD3100CPower MOSFET20 V, +3.9 A /-4.4 A,Complementary ChipFETtFeatureshttp://onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics58 mW @ 4.5 VN-Channel Trench P-Channel for Low On Resistance3.9 A20 V77 mW @ 2
8.4. Size:95K onsemi
nthd3102c.pdf
NTHD3102CPower MOSFETComplementary, 20 V, +5.5 A /-4.2 A,ChipFETtFeatures Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsID MAXV(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve
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