NTHD3133PF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTHD3133PF
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.1 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 8 V
Максимально допустимый постоянный ток стока |Id|: 3.2 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 11.7 ns
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.08 Ohm
Тип корпуса: CHIPFET8
Аналог (замена) для NTHD3133PF
NTHD3133PF Datasheet (PDF)
nthd3133pf nthd3133pft1g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NTHD3133PFPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with3.7 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indep
nthd3101ft1g nthd3101ft3.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NTHD3101FPower MOSFET andSchottky Diode-20 V, FETKYt, P-Channel, -4.4 A, with4.1 A Schottky Barrier Diode, ChipFETthttp://onsemi.comFeatures Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) TYP ID MAX Leadless SMD Package Provides Great Thermal Characteristics64 mW @ -4.5 V-20 V -4.4 A Indepe
nthd3101f.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NTHD3101FPower MOSFET andSchottky Diode-20 V, Fetky, P-Channel, -3.2 A, with 2.2ASchottky Barrier Diode, ChipFET]Featureshttp://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky DiodeMOSFET 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsV(BR)DSS RDS(on) TYP ID MAX Independent Pinout to each Device to E
nthd3100c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AND PIN ANTHD3100CPower MOSFET20 V, +3.9 A /-4.4 A,Complementary ChipFETtFeatureshttp://onsemi.com Complementary N-Channel and P-Channel MOSFET Small Size, 40% Smaller than TSOP-6 PackageV(BR)DSS RDS(on) Typ ID MAX Leadless SMD Package Provides Great Thermal Characteristics58 mW @ 4.5 VN-Channel Trench P-Channel for Low On Resistance3.9 A20 V77 mW @ 2
nthd3102c.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NTHD3102CPower MOSFETComplementary, 20 V, +5.5 A /-4.2 A,ChipFETtFeatures Complementary N-Channel and P-Channel MOSFET http://onsemi.com Small Size, 40% Smaller than TSOP-6 Package Leadless SMD Package Provides Great Thermal CharacteristicsID MAXV(BR)DSS RDS(on) TYP (Note 1) Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve
Другие MOSFET... NTGS3455 , NTGS4111P , NTGS4141N , NTGS5120P , NTHC5513 , NTHD3100C , NTHD3101F , NTHD3102C , IRFB4110 , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , NTHS4166N , NTHS5404 , NTHS5441T1 .
![NTHD3133PF](https://alltransistors.com/images/us.png)
![NTHD3133PF](https://alltransistors.com/images/es.png)
![NTHD3133PF](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C