NTHS5404
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTHS5404
Marking Code: A2*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6(min)
V
|Id|ⓘ - Maximum Drain Current: 5.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 337
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package: CHIPFET8
NTHS5404
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTHS5404
Datasheet (PDF)
0.1. Size:106K onsemi
nths5404t1g.pdf
NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul
0.2. Size:111K onsemi
nths5404t1.pdf
NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul
7.1. Size:200K onsemi
nths5402t1.pdf
NTHS5402T1Power MOSFETN-Channel ChipFETE4.9 Amps, 30 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Miniature ChipFET Surface Mount Package4.9 AMPSApplications Power Management in Portable and Battery-Powered Products; i.e., 30 VOLTSCellular and Cordless Telephones and PCMCIA CardsRDS(on) = 35 mWDMAXIMUM RATINGS (TA = 25C unless otherwise
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