NTHS5404 Datasheet and Replacement
Type Designator: NTHS5404
Marking Code: A2*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.6(min) V
|Id| ⓘ - Maximum Drain Current: 5.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 12 nC
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 337 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: CHIPFET8
NTHS5404 substitution
NTHS5404 Datasheet (PDF)
nths5404t1g.pdf

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul
nths5404t1.pdf

NTHS5404T1Power MOSFET20 V, 7.2 A, N-Channel ChipFETEFeatures Low RDS(on) for Higher Efficiencyhttp://onsemi.com Logic Level Gate Drive Miniature ChipFET Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available20 V 25 mW @ 4.5 V 7.2 AApplications Power Management in Portable and Battery-Powered Products; i.e.,Cellul
nths5402t1.pdf

NTHS5402T1Power MOSFETN-Channel ChipFETE4.9 Amps, 30 VoltsFeatureshttp://onsemi.com Low RDS(on) for Higher Efficiency Miniature ChipFET Surface Mount Package4.9 AMPSApplications Power Management in Portable and Battery-Powered Products; i.e., 30 VOLTSCellular and Cordless Telephones and PCMCIA CardsRDS(on) = 35 mWDMAXIMUM RATINGS (TA = 25C unless otherwise
Datasheet: NTHD3102C , NTHD3133PF , NTHD4102P , NTHD4502N , NTHD4508N , SRC60R090B , NTHS4101P , NTHS4166N , AON7408 , NTHS5441T1 , NTHS5443 , NTJD1155L , NTJD4001N , NTJD4105C , NTJD4152P , NTJD4158C , NTJD4401N .
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