NTJD4158C MOSFET Datasheet: NP-Ch, 30(20)V, 0.25(0.88)A. Full specification with pinout and replacement list

NTJD4158C Specs and Replacement

Type Designator: NTJD4158C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30(20) V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20(12) V

|Id| ⓘ - Maximum Drain Current: 0.25(0.88) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66(6.5) nS

Cossⓘ - Output Capacitance: 19(25) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5(0.26) Ohm

Package: SC88 SOT363

NTJD4158C substitution

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NTJD4158C datasheet

..1. Size:142K onsemi
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NTJD4158C Small Signal MOSFET 30 V/-20 V, +0.25/-0.88 A, Complementary, SC-88 Features http //onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V N-Ch This is a Pb-Free Device 0.25 A 30 V 1.5 W @ 2.5 V Applications 215 mW @ -4.5 V P-Ch -0.88 A -20 V... See More ⇒

..2. Size:142K onsemi
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NTJD4158C, NVJD4158C MOSFET Small Signal, Complementary, SC-88 30 V/-20 V, +0.25/-0.88 A Features www.onsemi.com Leading 20 V Trench for Low RDS(on) Performance ESD Protected Gate V(BR)DSS RDS(on) Typ ID Max SC-88 Package for Small Footprint (2 x 2 mm) 1.0 W @ 4.5 V NV Prefix for Automotive and Other Applications Requiring Unique N-Ch 0.25 A 30 V Site and Cont... See More ⇒

7.1. Size:126K onsemi
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NTJD4152P, NVJD4152P MOSFET Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features www.onsemi.com Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) V(BR)DSS RDS(on) Typ ID Max ESD Protected Gate 215 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique -20 V Site an... See More ⇒

7.2. Size:88K onsemi
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NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 http //onsemi.com Features Leading Trench Technology for Low RDS(ON) Performance V(BR)DSS RDS(on) Typ ID Max Small Footprint Package (SC70-6 Equivalent) 215 mW @ -4.5 V ESD Protected Gate Pb-Free Package is Available -20 V 345 mW @ -2.5 V -0.88 A Applications 600 mW @ -1.8 V ... See More ⇒