NTJS3151P MOSFET. Datasheet pdf. Equivalent
Type Designator: NTJS3151P
Marking Code: TJ*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 2.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8.6 nC
Cossⓘ - Output Capacitance: 170 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SC88 SOT363
NTJS3151P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTJS3151P Datasheet (PDF)
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NTJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureshttp://onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V Pb-Free Packages are Available-12 V67 mW @ -2.5 V -3.3 AApplications
ntjs3151p nvjs3151p.pdf
NTJS3151P, NVJS3151PTrench Power MOSFET12 V, 3.3 A, Single P-Channel, ESD Protected SC-88Featureswww.onsemi.com Leading Trench Technology for Low RDS(ON) Extending Battery Life SC-88 Small Outline (2x2 mm, SC70-6 Equivalent)V(BR)DSS RDS(on) Typ ID Max Gate Diodes for ESD Protection45 mW @ -4.5 V NV Prefix for Automotive and Other Applications Requiring Unique
ntjs3157n ntjs3157nt1g ntjs3157nt2 ntjs3157nt4.pdf
NTJS3157NTrench Power MOSFET20 V, 4.0 A, Single N-Channel, SC-88Features Leading Trench Technology for Low RDS(ON) Extending Battery Lifehttp://onsemi.com Fast Switching for Increased Circuit Efficiency SC-88 Small Outline (2 x 2 mm) for Maximum Circuit BoardV(BR)DSS RDS(on) Typ ID MaxUtilization, Same as SC-70-645 mW @ 4.5 V Pb-Free Packages are Available4.0
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .