All MOSFET. NTLJD3115P Datasheet

 

NTLJD3115P Datasheet and Replacement


   Type Designator: NTLJD3115P
   Marking Code: JD*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.5 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: WDFN6
 

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NTLJD3115P Datasheet (PDF)

 ..1. Size:151K  onsemi
 ntljd3115p.pdf pdf_icon

NTLJD3115P

NTLJD3115PPower MOSFET-20 V, -4.1 A, mCoolt Dual P-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive

 6.1. Size:127K  onsemi
 ntljd3119ctag ntljd3119ctbg.pdf pdf_icon

NTLJD3115P

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

 6.2. Size:169K  onsemi
 ntljd3119c.pdf pdf_icon

NTLJD3115P

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

 7.1. Size:128K  onsemi
 ntljd3182fztag ntljd3182fztbg.pdf pdf_icon

NTLJD3115P

NTLJD3182FZPower MOSFET andSchottky Diode-20 V, -4.0 A, mCoolt Single P-Channel& Schottky Barrier Diode, ESDFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MaxID Max Low Profile (

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Keywords - NTLJD3115P MOSFET datasheet

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