NTLJD3115P PDF and Equivalents Search

 

NTLJD3115P Specs and Replacement

Type Designator: NTLJD3115P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 91 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: WDFN6

NTLJD3115P substitution

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NTLJD3115P datasheet

 ..1. Size:151K  onsemi
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NTLJD3115P

NTLJD3115P Power MOSFET -20 V, -4.1 A, mCoolt Dual P-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package 100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive ... See More ⇒

 6.1. Size:127K  onsemi
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NTLJD3115P

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 6.2. Size:169K  onsemi
ntljd3119c.pdf pdf_icon

NTLJD3115P

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 7.1. Size:128K  onsemi
ntljd3182fztag ntljd3182fztbg.pdf pdf_icon

NTLJD3115P

NTLJD3182FZ Power MOSFET and Schottky Diode -20 V, -4.0 A, mCoolt Single P-Channel & Schottky Barrier Diode, ESD Features WDFN 2x2 mm Package with Exposed Drain Pads for Excellent http //onsemi.com Thermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 Package V(BR)DSS RDS(on) Max ID Max Low Profile (... See More ⇒

Detailed specifications: NTJS3157N , NTJS4151P , NTJS4405N , NTK3043N , NTK3134N , NTK3139P , NTLGD3502N , NTLGF3402P , 5N65 , NTLJD3119C , NTLJD4116N , NTLJF3117P , NTLJF4156N , NTLJS2103P , NTLJS3113P , NTLJS4114N , QM3098M6 .

History: FXN30N50F | FXN2N60D

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