NTLJS2103P MOSFET. Datasheet pdf. Equivalent

   Type Designator: NTLJS2103P
   Marking Code: J7*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.8 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: WDFN6

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NTLJS2103P Datasheet (PDF)

..1. Size:129K onsemi
ntljs2103p.pdf pdf_icon

NTLJS2103PPower MOSFET-12 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalV(BR)DSS RDS(on) TYP ID MAX (Note 1)Conduction 2x2 mm Footprint Same as SC-88 Package25 mW @ -4.5 V -5.9 A Lowest RDS(on) Solution in 2x2 mm Package

0.1. Size:125K onsemi
ntljs2103ptag ntljs2103ptbg.pdf pdf_icon

9.1. Size:84K onsemi
ntljs4114n.pdf pdf_icon

NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

9.2. Size:325K onsemi
ntljs17d0p03p8z.pdf pdf_icon

MOSFET - Power, SingleP-Channel, WDFN6-30 VProduct PreviewNTLJS17D0P03P8Zwww.onsemi.comFeatures Small Footprint (4 mm2) for Compact Design Low RDS(on) to Minimize Conduction LossesV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen-Free/BFR-Free and are RoHSCompliant 11.3 mW @ -10 V-30 V -11.7 A21.3 mW @ -4.5 VApplications Battery Management

9.3. Size:117K onsemi
ntljs3180pz ntljs3180pztbg.pdf pdf_icon

NTLJS3180PZPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,ESD, 2x2 mm WDFN PackageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm PackageV(BR)DSS RDS(on) MAX ID MAX Footprint Same as SC-88 Package38 mW @ -4.5 V Low Profile (

9.4. Size:91K onsemi
ntljs4149 ntljs4149ptag.pdf pdf_icon

NTLJS4149PPower MOSFET-30 V, -5.9 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX Low Profile (

9.5. Size:119K onsemi
ntljs1102p ntljs1102ptag ntljs1102ptbg.pdf pdf_icon

NTLJS1102PPower MOSFET-8 V, -8.1 A, mCOOL] Single P-Channel,2x2 mm, WDFN packageFeatures WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Lowest RDS(on) in 2 x 2 mm PackageV(BR)DSS RDS(on) MAX ID MAX 1.2 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate36 mW @ -4.5 V -6.2 ADrive 2 x 2 mm Footprint Same as SC-

9.6. Size:124K onsemi
ntljs3a18pz.pdf pdf_icon

NTLJS3A18PZPower MOSFET-20 V, -8.2 A, mCoolt Single P-Channel,2.0x2.0x0.8 mm WDFN PackageFeatures WDFN Package with Exposed Drain Pads for Excellent Thermalhttp://onsemi.comConduction Low Profile WDFN (2.0x2.0x0.8 mm) for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Ultra Low RDS(on)18 mW @ -4.5 V ESD Diode-Protected Gate25 mW @ -2.5 V-20 V -8.2 A T

9.7. Size:115K onsemi
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NTLJS4114NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

9.8. Size:126K onsemi
ntljs3113pt1g ntljs3113ptag.pdf pdf_icon

NTLJS3113PPower MOSFET-20 V, -7.7 A, mCoolt Single P-Channel,2x2 mm, WDFN PackageFeatures Recommended Replacement Device - NTLUS3A40Phttp://onsemi.com WDFN Package Provides Exposed Drain Pad for Excellent ThermalConduction V(BR)DSS RDS(on) MAX ID MAX (Note 1) 2x2 mm Footprint Same as SC-88 Package40 mW @ -4.5 V Lowest RDS(on) Solution in 2x2 mm Package50 mW @

9.9. Size:78K onsemi
ntljs4159n ntljs4159nt1g.pdf pdf_icon

NTLJS4159NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

9.10. Size:130K onsemi
ntljs3113p.pdf pdf_icon

Datasheet: NTK3139P , NTLGD3502N , NTLGF3402P , NTLJD3115P , NTLJD3119C , NTLJD4116N , NTLJF3117P , NTLJF4156N , 2N7000 , NTLJS3113P , NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF .

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NTLJS2103P MOSFET. Datasheet pdf. Equivalent

NTLJS2103P Datasheet (PDF)

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