NTLUF4189NZ Specs and Replacement
Type Designator: NTLUF4189NZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: UDFN6
NTLUF4189NZ substitution
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NTLUF4189NZ datasheet
ntluf4189nz ntluf4189nztag.pdf
NTLUF4189NZ Power MOSFET and Schottky Diode 30 V, N-Channel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm mCoolt Package Features http //onsemi.com Low Qg and Capacitance to Minimize Switching Losses MOSFET Low Profile UDFN 1.6x1.6 mm for Board Space Saving V(BR)DSS RDS(on) MAX ID MAX Low VF Schottky Diode ESD Protected Gate 200 mW @ 4.5 V 1.5 A This i... See More ⇒
Detailed specifications: NTLJD3119C, NTLJD4116N, NTLJF3117P, NTLJF4156N, NTLJS2103P, NTLJS3113P, NTLJS4114N, QM3098M6, IRFP450, QN3109M6N, S60N12R, NTMD3P03, NTMD4184PF, NTMD4820N, NTMD4840N, NTMD4884NF, NTMD5836NL
Keywords - NTLUF4189NZ MOSFET specs
NTLUF4189NZ cross reference
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NTLUF4189NZ replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SI4966DY | EMB20N03V | AP70T03AH | LSB60R280HT
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