NTLUF4189NZ Datasheet and Replacement
Type Designator: NTLUF4189NZ
Marking Code: AA*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.4 nC
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: UDFN6
NTLUF4189NZ substitution
NTLUF4189NZ Datasheet (PDF)
..1. Size:149K onsemi
ntluf4189nz ntluf4189nztag.pdf
ntluf4189nz ntluf4189nztag.pdf
NTLUF4189NZPower MOSFET andSchottky Diode30 V, N-Channel with 0.5 A SchottkyBarrier Diode, 1.6 x 1.6 x 0.55 mmmCoolt PackageFeatureshttp://onsemi.com Low Qg and Capacitance to Minimize Switching LossesMOSFET Low Profile UDFN 1.6x1.6 mm for Board Space SavingV(BR)DSS RDS(on) MAX ID MAX Low VF Schottky Diode ESD Protected Gate 200 mW @ 4.5 V 1.5 A This i
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