NTMD3P03 PDF and Equivalents Search

 

NTMD3P03 Specs and Replacement

Type Designator: NTMD3P03

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.86 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOIC8

NTMD3P03 substitution

- MOSFET ⓘ Cross-Reference Search

 

NTMD3P03 datasheet

 ..1. Size:110K  onsemi
ntmd3p03 nvmd3p03.pdf pdf_icon

NTMD3P03

NTMD3P03, NVMD3P03 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature VDSS RDS(ON) Typ ID Max ... See More ⇒

 0.1. Size:146K  onsemi
ntmd3p03r2.pdf pdf_icon

NTMD3P03

NTMD3P03R2 Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SOIC-8 Features High Efficiency Components in a Dual SOIC-8 Package High Density Power MOSFET with Low RDS(on) http //onsemi.com Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery VDSS RDS(ON) Typ ID Max IDSS Specified at Elevated Temperature Avala... See More ⇒

 0.2. Size:868K  cn vbsemi
ntmd3p03r2g.pdf pdf_icon

NTMD3P03

NTMD3P03R2G www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top ... See More ⇒

 9.1. Size:159K  onsemi
ntmd3n08lr2.pdf pdf_icon

NTMD3P03

NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http //onsemi.com Features Ultra Low On-Resistance Provides Higher Efficiency 2.3 AMPERES RDS(on) = 0.215 W, VGS = 10 V 80 VOLTS RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses 215 mW @ VGS = 5 V (Typ) Internal RG = 50 W Designed for Power Management Solutio... See More ⇒

Detailed specifications: NTLJF4156N, NTLJS2103P, NTLJS3113P, NTLJS4114N, QM3098M6, NTLUF4189NZ, QN3109M6N, S60N12R, BS170, NTMD4184PF, NTMD4820N, NTMD4840N, NTMD4884NF, NTMD5836NL, NTMD5838NL, NTMD6N02R2, NTMD6N03R2

Keywords - NTMD3P03 MOSFET specs

 NTMD3P03 cross reference

 NTMD3P03 equivalent finder

 NTMD3P03 pdf lookup

 NTMD3P03 substitution

 NTMD3P03 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.