NTMFS4833NS MOSFET Datasheet: N-Ch, 30V, 26A. Full specification with pinout and replacement list

NTMFS4833NS Specs and Replacement

Type Designator: NTMFS4833NS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1080 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: SO8FL

NTMFS4833NS substitution

- MOSFET ⓘ Cross-Reference Search

NTMFS4833NS datasheet

..1. Size:139K onsemi
ntmfs4833ns.pdf pdf_icon

NTMFS4833NS SENSEFET) Power MOSFET 30 V, 156 A, Single N-Channel, SO-8 FL Features Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2.2 m... See More ⇒

0.1. Size:139K onsemi
ntmfs4833nst1g.pdf pdf_icon

4.1. Size:880K onsemi
ntmfs4833na.pdf pdf_icon

... See More ⇒

4.2. Size:139K onsemi
ntmfs4833nt1g.pdf pdf_icon

NTMFS4833N Power MOSFET 30 V, 191 A, Single N-Channel, SO-8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications Refer to Application Note AND8195/D 2.0 mW @ 10 V 30 V 191 A CPU Po... See More ⇒