All MOSFET. NTMS4917N Datasheet

 

NTMS4917N Datasheet and Replacement


   Type Designator: NTMS4917N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SO8
 

 NTMS4917N substitution

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NTMS4917N Datasheet (PDF)

 ..1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4917N

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

 0.1. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4917N

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

 7.1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4917N

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

 7.2. Size:109K  onsemi
 ntms4916nr2g.pdf pdf_icon

NTMS4917N

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

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Datasheet: NTMS4503N , NTMS4800N , NTMS4801N , NTMS4802N , NTMS4807N , NTMS4816N , NTMS4873NF , NTMS4916N , IRF3710 , NTMS4920N , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , NTMS7N03R2 , NTNUS3171PZ .

History: IRF460B | TK3R3A06PL | SI1302DL | NVB5860N | KU2310Q | SML50L37 | CS16N65FA9H

Keywords - NTMS4917N MOSFET datasheet

 NTMS4917N cross reference
 NTMS4917N equivalent finder
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