All MOSFET. NTMS4917N Datasheet

 

NTMS4917N Datasheet and Replacement


   Type Designator: NTMS4917N
   Marking Code: 4917N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 29 nC
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 325 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SO8
 

 NTMS4917N substitution

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NTMS4917N Datasheet (PDF)

 ..1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4917N

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

 0.1. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4917N

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

 7.1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4917N

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

 7.2. Size:109K  onsemi
 ntms4916nr2g.pdf pdf_icon

NTMS4917N

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

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Keywords - NTMS4917N MOSFET datasheet

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