NTP2955 MOSFET. Datasheet pdf. Equivalent
Type Designator: NTP2955
Marking Code: NT2955
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 14 nC
trⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.196 Ohm
Package: TO220
NTP2955 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTP2955 Datasheet (PDF)
ntp2955.pdf
NTP2955MOSFET Power, Single,P-Channel, TO-220-60 V, -12 AFeatureswww.onsemi.com Low RDS(on) Rugged Performance V(BR)DSS RDS(on) Typ ID MAX Fast Switching-60 V 156 mW @ -10 V -12 A These are Pb-Free Devices*P-ChannelApplicationsD Industrial Automotive Power SuppliesGMAXIMUM RATINGS (TJ = 25C unless otherwise noted)SParameter Symb
ntp2955 ntp2955g.pdf
NTP2955Power MOSFET-60 V, -12 A, Single P-Channel, TO-220Features Low RDS(on)http://onsemi.com Rugged Performance Fast SwitchingV(BR)DSS RDS(on) Typ ID MAX Pb-Free Package is Available*-60 V 156 mW @ -10 V -12 AApplications IndustrialP-Channel AutomotiveD Power SuppliesMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Va
ntp2955g.pdf
NTP2955Gwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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