NTP5864N PDF and Equivalents Search

 

NTP5864N Specs and Replacement

Type Designator: NTP5864N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0124 Ohm

Package: TO220AB

NTP5864N substitution

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NTP5864N datasheet

 ..1. Size:73K  onsemi
ntp5864n.pdf pdf_icon

NTP5864N

NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features Low RDS(on) High Current Capability www.onsemi.com Avalanche Energy Specified ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX (Note 1) Compliant 60 V 12.4 m @ 10 V 63 A MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) N-Channel Parameter Symbol Value Units D Drain-... See More ⇒

 0.1. Size:101K  onsemi
ntp5864ng.pdf pdf_icon

NTP5864N

NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX (Note 1) Compliant 60 V 12.4 m @ 10 V 63 A MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) N-Channel Parameter Symbol Value Units D Dra... See More ⇒

 8.1. Size:137K  onsemi
ntd5862n ntp5862n.pdf pdf_icon

NTP5864N

NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 mW Features www.onsemi.com Low RDS(on) V(BR)DSS RDS(on) MAX ID MAX High Current Capability 60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit G Drain-t... See More ⇒

 8.2. Size:113K  onsemi
ntb5860n ntp5860n nvb5860n.pdf pdf_icon

NTP5864N

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features http //onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested 60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change... See More ⇒

Detailed specifications: NTMS5835NL, NTMS5838NL, NTMS5P02, NTMS7N03R2, NTNUS3171PZ, NTP2955, NTP5404N, NTP5863N, AON7408, NTP6410AN, NTP6411AN, NTP6412AN, NTP6413AN, NTR0202PL, NTR1P02, NTR1P02LT1, NTR2101P

Keywords - NTP5864N MOSFET specs

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