NTS2101P MOSFET Datasheet: P-Ch, 8V, 1.4A. Full specification with pinout and replacement list

NTS2101P Specs and Replacement

Type Designator: NTS2101P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SC70 SOT323

NTS2101P substitution

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NTS2101P datasheet

..1. Size:61K onsemi
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NTS2101P Power MOSFET -8.0 V, -1.4 A, Single P-Channel, SC-70 Features Leading Trench Technology for Low RDS(on) Extending Battery Life http //onsemi.com -1.8 V Rated for Low Voltage Gate Drive V(BR)DSS RDS(on) Typ ID Max SC-70 Surface Mount for Small Footprint (2 x 2 mm) 65 mW @ -4.5 V Pb-Free Package is Available -8.0 V 78 mW @ -2.5 V -1.4 A Applications High ... See More ⇒

0.1. Size:61K onsemi
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NTS2101PT1G www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Conv... See More ⇒

Detailed specifications: NTR2101P, NTR4003N, IPS65R650CE, NTR4170N, NTR4171P, NTR4501N, NTR4502P, NTR4503N, 12N60, NTS4001N, NTS4101P, NTS4173P, NTS4409NT1G, NTTD4401F, NTTFS4821N, NTTFS4823N, NTTFS4824N