All MOSFET. NTS4409NT1G Datasheet

 

NTS4409NT1G Datasheet and Replacement


   Type Designator: NTS4409NT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 22.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SC70 SOT323
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NTS4409NT1G Datasheet (PDF)

 6.1. Size:123K  onsemi
 nts4409n nvs4409n.pdf pdf_icon

NTS4409NT1G

NTS4409N, NVS4409NSmall Signal MOSFET25 V, 0.75 A, Single, N-Channel,ESD Protection, SC-70/SOT-323Featureshttp://onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SI7113ADN | AOB12N65L | APT4014BVFRG | AM4935P | APT10021JFLL | HM12N60 | NTR1P02LT1G

Keywords - NTS4409NT1G MOSFET datasheet

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