NTS4409NT1G Datasheet and Replacement
Type Designator: NTS4409NT1G
Marking Code: T4*
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 0.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.2 nC
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 22.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
Package: SC70 SOT323
NTS4409NT1G substitution
NTS4409NT1G Datasheet (PDF)
nts4409n nvs4409n.pdf

NTS4409N, NVS4409NSmall Signal MOSFET25 V, 0.75 A, Single, N-Channel,ESD Protection, SC-70/SOT-323Featureshttp://onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery LifeV(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant25
Datasheet: NTR4171P , NTR4501N , NTR4502P , NTR4503N , NTS2101P , NTS4001N , NTS4101P , NTS4173P , IRLZ44N , NTTD4401F , NTTFS4821N , NTTFS4823N , NTTFS4824N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N .
History: APT20M19JVR
Keywords - NTS4409NT1G MOSFET datasheet
NTS4409NT1G cross reference
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History: APT20M19JVR



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