All MOSFET. NTTFS4939N Datasheet

 

NTTFS4939N Datasheet and Replacement


   Type Designator: NTTFS4939N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 14.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.6 nS
   Cossⓘ - Output Capacitance: 711 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: WDFN8
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NTTFS4939N Datasheet (PDF)

 ..1. Size:193K  onsemi
 nttfs4939n.pdf pdf_icon

NTTFS4939N

NTTFS4939NMOSFET Power, Single,N-Channel, m8FL30 V, 52 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 V30 V 52 ACompliant8.0 mW @ 4.5 VA

 0.1. Size:111K  onsemi
 nttfs4939n-d.pdf pdf_icon

NTTFS4939N

NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S

 0.2. Size:111K  onsemi
 nttfs4939ntag.pdf pdf_icon

NTTFS4939N

NTTFS4939NPower MOSFET30 V, 52 A, Single N-Channel, m8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(on) MAX ID MAXCompliantApplications5.5 mW @ 10 V30 V 52 A Low-S

 6.1. Size:195K  onsemi
 nttfs4932n.pdf pdf_icon

NTTFS4939N

NTTFS4932NMOSFET Power, Single,N-Channel, m8FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.0 mW @ 10 V30 V 79 ACompliant5.5 mW @ 4.5 VA

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Keywords - NTTFS4939N MOSFET datasheet

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