NTTFS4939N. Аналоги и основные параметры
Наименование производителя: NTTFS4939N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.21 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20.6 ns
Cossⓘ - Выходная емкость: 711 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: WDFN8
Аналог (замена) для NTTFS4939N
- подборⓘ MOSFET транзистора по параметрам
NTTFS4939N даташит
nttfs4939n.pdf
NTTFS4939N MOSFET Power, Single, N-Channel, m8FL 30 V, 52 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 5.5 mW @ 10 V 30 V 52 A Compliant 8.0 mW @ 4.5 V A
nttfs4939n-d.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
nttfs4939ntag.pdf
NTTFS4939N Power MOSFET 30 V, 52 A, Single N-Channel, m8FL Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(on) MAX ID MAX Compliant Applications 5.5 mW @ 10 V 30 V 52 A Low-S
nttfs4932n.pdf
NTTFS4932N MOSFET Power, Single, N-Channel, m8FL 30 V, 79 A Features http //onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses V(BR)DSS RDS(on) MAX ID MAX Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 4.0 mW @ 10 V 30 V 79 A Compliant 5.5 mW @ 4.5 V A
Другие MOSFET... NTTFS4821N , NTTFS4823N , NTTFS4824N , NTTFS4928N , NTTFS4929N , NTTFS4930N , NTTFS4932N , NTTFS4937N , 4N60 , NTTFS4941N , NTTFS5116PL , NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ .
History: SI2302AI-MS | H50N03J | MDS3653URH | SLP240C03D | IXFE44N60 | MPG120N06P | FCPF190N65S3R0L
History: SI2302AI-MS | H50N03J | MDS3653URH | SLP240C03D | IXFE44N60 | MPG120N06P | FCPF190N65S3R0L
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