All MOSFET. NTZD3155C Datasheet

 

NTZD3155C Datasheet and Replacement


   Type Designator: NTZD3155C
   Marking Code: TW
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 0.54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 1.5(1.7) nC
   tr ⓘ - Rise Time: 4(12) nS
   Cossⓘ - Output Capacitance: 13(15) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55(0.9) Ohm
   Package: SOT563
 

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NTZD3155C Datasheet (PDF)

 ..1. Size:215K  onsemi
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NTZD3155C

NTZD3155CMOSFET Small Signal,Complementary with ESDProtection, SOT-56320 V, 540 mA / -430 mAwww.onsemi.comFeaturesID Max Leading Trench Technology for Low RDS(on) PerformanceV(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance0.4 W @ 4.5 V Low Threshold VoltageN-Channel0.5 W @ 2.5 V 540 mA20 V ESD Protected Gate0.7 W @ 1.8 V Sma

 0.1. Size:111K  onsemi
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NTZD3155C

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Features http://onsemi.com Leading Trench Technology for Low RDS(on) PerformanceID Max High Efficiency System PerformanceV(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage0.4 W @ 4.5 V ESD Protected Gate N-Channel0.5 W @ 2.5 V 540 mA20 V Small Footpri

 0.2. Size:114K  onsemi
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NTZD3155C

NTZD3155CSmall Signal MOSFETComplementary 20 V, 540 mA / -430 mA,with ESD protection, SOT-563 package.Featureshttp://onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System PerformanceID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate0.4 W @ 4.5 VN-Channel0.5 W @ 2.5 V 540 mA Small Footprint 1.

 0.3. Size:1681K  cn vbsemi
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NTZD3155C

NTZD3155CT2Gwww.VBsemi.twN- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFETN-Channel 200.025 at VGS = 4.5 V0.55 100 % Rg Tested0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/ECP-Channel - 200.045 at

Datasheet: NTTFS5811NL , NTTFS5820NL , NTTFS5826NL , NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P , NTZD3154N , 10N65 , NTZD5110N , NTZS3151P , FDB075N15AF085 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N .

Keywords - NTZD3155C MOSFET datasheet

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