NTZD3155C MOSFET Datasheet: NP-Ch, 20V, 0.54A. Full specification with pinout and replacement list

NTZD3155C Specs and Replacement

Type Designator: NTZD3155C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4(12) nS

Cossⓘ - Output Capacitance: 13(15) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55(0.9) Ohm

Package: SOT563

NTZD3155C substitution

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NTZD3155C datasheet

..1. Size:215K onsemi
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NTZD3155C MOSFET Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 mA www.onsemi.com Features ID Max Leading Trench Technology for Low RDS(on) Performance V(BR)DSS RDS(on) Typ (Note 1) High Efficiency System Performance 0.4 W @ 4.5 V Low Threshold Voltage N-Channel 0.5 W @ 2.5 V 540 mA 20 V ESD Protected Gate 0.7 W @ 1.8 V Sma... See More ⇒

0.1. Size:111K onsemi
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NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance ID Max High Efficiency System Performance V(BR)DSS RDS(on) Typ (Note 1) Low Threshold Voltage 0.4 W @ 4.5 V ESD Protected Gate N-Channel 0.5 W @ 2.5 V 540 mA 20 V Small Footpri... See More ⇒

0.2. Size:114K onsemi
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NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http //onsemi.com Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance ID Max Low Threshold Voltage V(BR)DSS RDS(on) Typ (Note 1) ESD Protected Gate 0.4 W @ 4.5 V N-Channel 0.5 W @ 2.5 V 540 mA Small Footprint 1.... See More ⇒

0.3. Size:1681K cn vbsemi
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NTZD3155CT2G www.VBsemi.tw N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.020 at VGS = 10 V 0.6 TrenchFET Power MOSFET N-Channel 20 0.025 at VGS = 4.5 V 0.55 100 % Rg Tested 0.040 at VGS = - 10 V - 0.4 Compliant to RoHS Directive 2002/95/EC P-Channel - 20 0.045 at ... See More ⇒

Detailed specifications: NTTFS5811NL, NTTFS5820NL, NTTFS5826NL, NTUD3127C, NTUD3169CZ, NTUD3170NZ, NTZD3152P, NTZD3154N, IRF520, NTZD5110N, NTZS3151P, FDB075N15AF085, NUS3116MT, NUS5530MN, NUS5531MT, NVD5803N, NVD5862N