NUS3116MT Datasheet and Replacement
Type Designator: NUS3116MT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 5.47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 17.5 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: DFN8
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NUS3116MT Datasheet (PDF)
nus3116mt.pdf
NUS3116MTMain Switch PowerMOSFET and Dual ChargingBJT-12 V, -6.2 A, mCoolE Single P-Channelhttp://onsemi.comwith Dual PNP low Vce(sat) Transistors,3x3 mm WDFN PackageMOSFETV(BR)DSS RDS(on) TYP ID MAXThis device integrates one high performance power MOSFET andtwo low Vce(sat) transistors, greatly reducing the layout space and 32 mW @ -4.5 V-12 V -6.2 Aoptimizing chargin
ntnus3171pzt5g.pdf
NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
ntnus3171pz.pdf
NTNUS3171PZSmall Signal MOSFET-20 V, -200 mA, Single P-Channel,1.0 x 0.6 mm SOT-1123 PackageFeatures http://onsemi.com Single P-Channel MOSFET Offers a Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mmV(BR)DSS RDS(ON) MAX ID MaxPackage3.5 W @ -4.5 V 1.5 V Gate Voltage Rating4.0 W @ -2.5 V Ultra Thin Profile (
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TK2P60D | BUK625R0-40C | IRFBG20 | DMP2104LP
Keywords - NUS3116MT MOSFET datasheet
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History: TK2P60D | BUK625R0-40C | IRFBG20 | DMP2104LP
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