NUS5530MN Datasheet and Replacement
Type Designator: NUS5530MN
Marking Code: 5530
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id| ⓘ - Maximum Drain Current: 3.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 9.7 nC
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: DFN8
NUS5530MN Datasheet (PDF)
nus5530mn.pdf
NUS5530MNIntegrated Power MOSFETwith PNP Low VCE(sat)Switching TransistorThis integrated device represents a new level of safety andboard-space reduction by combining the 20 V P-Channel FET with ahttp://onsemi.comPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredportable electronics. 1 8Feat
nus5530mnr2g.pdf
NUS5530MNIntegrated Power MOSFETwith PNP Low VCE(sat)Switching TransistorThis integrated device represents a new level of safety andboard-space reduction by combining the 20 V P-Channel FET with ahttp://onsemi.comPNP Silicon Low VCE(sat) switching transistor. This newly integratedproduct provides higher efficiency and accuracy for battery poweredportable electronics. 1 8Feat
nus5531mt.pdf
NUS5531MTMain Switch PowerMOSFET and SingleCharging BJT-12 V, -6.2 A, Single P-Channel FET withhttp://onsemi.comSingle PNP low Vce(sat) Transistor,3x3 mm WDFN PackageMOSFETV(BR)DSS RDS(on) TYP ID MAXThis device integrates one high performance power MOSFET andone low Vce(sat) transistor, greatly reducing the layout space and 32 mW @ -4.5 V-12 V -6.2 Aoptimizing charging
Datasheet: NTUD3170NZ , NTZD3152P , NTZD3154N , NTZD3155C , NTZD5110N , NTZS3151P , FDB075N15AF085 , NUS3116MT , 8N60 , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , NVD5865NL , NVD5867NL , NVD5890N , NVMFD5877NL .
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