NUS5530MN - аналоги, параметры транзистора - Справочник транзисторов

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NUS5530MN Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel FET with a http //onsemi.com PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics. 1 8 Feat

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NUS5531MT Main Switch Power MOSFET and Single Charging BJT -12 V, -6.2 A, Single P-Channel FET with http //onsemi.com Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Package MOSFET V(BR)DSS RDS(on) TYP ID MAX This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and 32 mW @ -4.5 V -12 V -6.2 A optimizing charging

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