2N6768JTX Datasheet. Specs and Replacement
Type Designator: 2N6768JTX 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 190 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO204
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2N6768JTX substitution
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2N6768JTX datasheet
2n6768 irf350.pdf
PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
2n6764 2n6766 2n6768 2n6770.pdf
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION... See More ⇒
Detailed specifications: 2N6766JANTXV, 2N6766JTX, 2N6766JTXV, 2N6767, 2N6768, 2N6768JAN, 2N6768JANTX, 2N6768JANTXV, STP65NF06, 2N6768JTXV, 2N6769, 2N6770, 2N6770JANTX, 2N6770JANTXV, 2N6770JTX, 2N6770JTXV, 2N6781
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