TF252 Datasheet and Replacement
Type Designator: TF252
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.03 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.1 V
|Id|ⓘ - Maximum Drain Current: 0.001 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 10000 Ohm
Package: USFP
- MOSFET Cross-Reference Search
TF252 Datasheet (PDF)
tf252.pdf

Ordering number : ENA0841BTF252N-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.4mS, USFPFeatures High gain : GV=1.0dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products [1.0mm 0.6mm 0.27mm (max 0.3mm)] Best suited for use in Electret Condenser Microphone for audio equipments and telephone
tf252th.pdf

Ordering number : ENA0842ATF252THN-Channel JFEThttp://onsemi.com20V, 140 to 350 A, 1.4mS, VTFPFeatures High gain : GV=1.0dB typ (VCC=2V, RL=2.2k , Cin=5pF, VIN=10mV, f=1kHz) Ultrasmall package facilitates miniaturization in end products Best suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristi
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: R6504KNX | RCD080N25TL
Keywords - TF252 MOSFET datasheet
TF252 cross reference
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History: R6504KNX | RCD080N25TL



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