FDMS8672S MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS8672S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: POWER56
FDMS8672S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS8672S Datasheet (PDF)
fdms8672s.pdf
May 2009FDMS8672SN-Channel PowerTrench SyncFETTM 30V, 35A, 5mFeatures General DescriptionThe FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17Apower conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Packa
fdms8672as.pdf
May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advance
fdms8670s.pdf
October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Adva
fdms8670.pdf
May 2009FDMS8670tmN-Channel Power Trench MOSFET 30V, 42A, 2.6mFeatures General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18Ahas been especially tailored to minimize on-resistance. This part 100% UIL T
fdms8674.pdf
May 2009FDMS8674tmN-Channel PowerTrench MOSFET 30V, 21A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14Apackage technologies have been combined to offer the lowest Advanced Packa
fdms8670as.pdf
May 2009FDMS8670AStmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.0mFeatures General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18Apackage technologies have been combined to offer the lowest Advance
Datasheet: TF256 , TF256TH , WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , 2SK3878 , FMD21-05QC , FMD40-06KC , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F .
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