FDMS8672S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDMS8672S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 150 °C
Qg ⓘ - Общий заряд затвора: 47 nC
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
Тип корпуса: POWER56
Аналог (замена) для FDMS8672S
FDMS8672S Datasheet (PDF)
fdms8672s.pdf

May 2009FDMS8672SN-Channel PowerTrench SyncFETTM 30V, 35A, 5mFeatures General DescriptionThe FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17Apower conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Packa
fdms8672as.pdf

May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advance
fdms8670s.pdf

October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Adva
fdms8670.pdf

May 2009FDMS8670tmN-Channel Power Trench MOSFET 30V, 42A, 2.6mFeatures General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18Ahas been especially tailored to minimize on-resistance. This part 100% UIL T
Другие MOSFET... TF256 , TF256TH , WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , IRFP250N , FMD21-05QC , FMD40-06KC , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F .



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