FDMS8672S - параметры транзистора MOSFET, его аналоги, datasheet

FDMS8672S Datasheet (PDF)

..1. Size:242K fairchild semi
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May 2009FDMS8672SN-Channel PowerTrench SyncFETTM 30V, 35A, 5mFeatures General DescriptionThe FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17Apower conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advanced Packa

6.1. Size:243K fairchild semi
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May 2009FDMS8672AStmN-Channel PowerTrench SyncFETTM 30V, 28A, 5.0mFeatures General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15Apackage technologies have been combined to offer the lowest Advance

7.1. Size:283K fairchild semi
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October 2014FDMS8670StmN-Channel PowerTrench SyncFETTM 30V, 42A, 3.5mFeatures General DescriptionThe FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17Apackage technologies have been combined to offer the lowest Adva

7.2. Size:237K fairchild semi
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May 2009FDMS8670tmN-Channel Power Trench MOSFET 30V, 42A, 2.6mFeatures General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18Ahas been especially tailored to minimize on-resistance. This part 100% UIL T