All MOSFET. FMM22-06PF Datasheet

 

FMM22-06PF Datasheet and Replacement


   Type Designator: FMM22-06PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Qgⓘ - Total Gate Charge: 58 nC
   trⓘ - Rise Time: 23 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: ISOPLUSI4
      - MOSFET Cross-Reference Search

 

FMM22-06PF Datasheet (PDF)

 ..1. Size:96K  ixys
 fmm22-06pf.pdf pdf_icon

FMM22-06PF

Advance Technical InformationPolarHVTM HiPerFETVDSS = 600VFMM22-06PFN-Channel Power MOSFETID25 = 12APhase leg Topology RDS(on) 350m 33T1trr(max) 200ns5544T2112 ISOPLUS i4-PakTM2Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVISO

 7.1. Size:95K  ixys
 fmm22-05pf.pdf pdf_icon

FMM22-06PF

Advance Technical InformationPolarHVTM HiPerFETVDSS = 500VFMM22-05PFN-Channel Power MOSFETID25 = 13APhase Leg Topology RDS(on) 270m 33T1trr(max) 200ns5544T2ISOPLUS i4-PakTM1122Symbol Test Conditions Maximum RatingsTJ -55 ... +150 CTJM 150 C1Tstg -55 ... +150 CIsolated TabVIS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AM3416 | AM3401

Keywords - FMM22-06PF MOSFET datasheet

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