FDMS0310S
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMS0310S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 33
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044
Ohm
Package:
PQFN5X6
FDMS0310S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMS0310S
Datasheet (PDF)
..1. Size:454K fairchild semi
fdms0310s.pdf 
January 2015FDMS0310SN-Channel PowerTrench SyncFETTM30 V, 42 A, 4 mFeatures General DescriptionThe FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest Advan
6.1. Size:337K fairchild semi
fdms0310as.pdf
August 2014FDMS0310ASN-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 mFeatures General DescriptionThe FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 Apackage technologies have been combined to offer the lowest A
7.1. Size:270K fairchild semi
fdms0312s.pdf
January 2010FDMS0312SN-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 mFeatures General DescriptionThe FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 Apackage technologies have been combined to offer the lowest
7.2. Size:305K fairchild semi
fdms0312as.pdf
October 2014FDMS0312ASN-Channel PowerTrench SyncFETTM30 V, 22 A, 5.0 mFeatures General DescriptionThe FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 Apower conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 Apackage technologies have been combined to offer the lowest A
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
