FDMS0310S. Аналоги и основные параметры
Наименование производителя: FDMS0310S
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0044 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS0310S
- подборⓘ MOSFET транзистора по параметрам
FDMS0310S даташит
fdms0310s.pdf
January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan
fdms0310as.pdf
August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A
fdms0312s.pdf
January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest
fdms0312as.pdf
October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A
Другие MOSFET... FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL , FDMS3600AS , GWM120-0075X1-SMD , 10N65 , GWM160-0055X1-SL , FDMS0302S , GWM160-0055X1-SMD , FCP190N65F , GWM180-004X2-SL , FCH043N60 , GWM180-004X2-SMD , FDB86360F085 .
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Список транзисторов
Обновления
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