All MOSFET. IXFA5N100P Datasheet

 

IXFA5N100P Datasheet and Replacement


   Type Designator: IXFA5N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 200 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO263
 

 IXFA5N100P substitution

   - MOSFET ⓘ Cross-Reference Search

 

IXFA5N100P Datasheet (PDF)

 8.1. Size:164K  ixys
 ixfa5n50p3 ixfp5n50p3 ixfy5n50p3.pdf pdf_icon

IXFA5N100P

Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 500VIXFY5N50P3Power MOSFETs ID25 = 5AIXFA5N50P3 RDS(on) 1.65 IXFP5N50P3N-Channel Enhancement ModeAvalanche RatedTO-252 (IXFY)Fast Intrinsic RectifierGSD (Tab)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V TO-263 AA (IXFA)VDGR TJ = 25C to 150C, R

 9.1. Size:313K  ixys
 ixfa56n30x3 ixfp56n30x3 ixfh56n30x3.pdf pdf_icon

IXFA5N100P

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 300VIXFA56N30X3Power MOSFET ID25 = 56AIXFP56N30X3 RDS(on) 27m IXFH56N30X3N-Channel Enhancement ModeTO-263 (IXFA)Avalanche RatedGSD (Tab)TO-220 (IXFP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 300 VVDGR TJ = 25C to 150C, RGS = 1M 300

Datasheet: IXFA16N50P , IXFA180N10T2 , IXFA230N075T2 , IXFA230N075T2-7 , IXFA3N120 , IXFA3N80 , IXFA4N100P , IXFA4N100Q , IRF520 , IXFA6N120P , IXFA76N15T2 , IXFA7N100P , IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 .

History: AP3986P | STP11NK40Z | AP02N40P | RF1S60P03 | 2SJ419 | PSMN020-30MLC | WMB060N10LGS

Keywords - IXFA5N100P MOSFET datasheet

 IXFA5N100P cross reference
 IXFA5N100P equivalent finder
 IXFA5N100P lookup
 IXFA5N100P substitution
 IXFA5N100P replacement

 

 
Back to Top

 


 
.