All MOSFET. IXFA6N120P Datasheet

 

IXFA6N120P Datasheet and Replacement


   Type Designator: IXFA6N120P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.75 Ohm
   Package: TO263
 

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IXFA6N120P Datasheet (PDF)

 9.1. Size:288K  ixys
 ixfa60n25x3 ixfp60n25x3 ixfq60n25x3.pdf pdf_icon

IXFA6N120P

X3-Class HiPerFETTM VDSS = 250VIXFA60N25X3Power MOSFET ID25 = 60AIXFP60N25X3 RDS(on) 23m IXFQ60N25X3N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)Fast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 250 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 250 VVGSS Co

Datasheet: IXFA180N10T2 , IXFA230N075T2 , IXFA230N075T2-7 , IXFA3N120 , IXFA3N80 , IXFA4N100P , IXFA4N100Q , IXFA5N100P , EMB04N03H , IXFA76N15T2 , IXFA7N100P , IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 .

History: WMN28N60F2 | STD11NM65N | TK6A80E | HM4110T | PSMN7R6-60XS | IRFP3703 | SFF801R2

Keywords - IXFA6N120P MOSFET datasheet

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