IXFA6N120P PDF and Equivalents Search

 

IXFA6N120P Specs and Replacement

Type Designator: IXFA6N120P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.75 Ohm

Package: TO263

IXFA6N120P substitution

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IXFA6N120P datasheet

 9.1. Size:288K  ixys
 ixfa60n25x3 ixfp60n25x3 ixfq60n25x3.pdf pdf_icon

IXFA6N120P

X3-Class HiPerFETTM VDSS = 250V IXFA60N25X3 Power MOSFET ID25 = 60A IXFP60N25X3 RDS(on) 23m IXFQ60N25X3 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXFA) Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 150 C 250 V (IXFP) VDGR TJ = 25 C to 150 C, RGS = 1M 250 V VGSS Co... See More ⇒

Detailed specifications: IXFA180N10T2, IXFA230N075T2, IXFA230N075T2-7, IXFA3N120, IXFA3N80, IXFA4N100P, IXFA4N100Q, IXFA5N100P, AON7403, IXFA76N15T2, IXFA7N100P, IXFA7N80P, IXFB100N50P, IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3

Keywords - IXFA6N120P MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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