IXFA76N15T2 Datasheet and Replacement
Type Designator: IXFA76N15T2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 350 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 76 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 69 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO263
IXFA76N15T2 substitution
IXFA76N15T2 Datasheet (PDF)
ixfa76n15t2 ixfp76n15t2.pdf
Advance Technical InformationTrenchT2TM HiperFETTM VDSS = 150VIXFA76N15T2ID25 = 76APower MOSFETIXFP76N15T2 RDS(on) 20m N-Channel Enhancement ModeAvalanche Rated TO-263 AA (IXFA)Fast Intrnsic RectifierGSSymbol Test Conditions Maximum Ratings D (TAB)VDSS TJ = 25C to 175C 150 VTO-220AB (IXFP)VDGR TJ = 25C to 175C, RGS = 1M
ixfa7n60p3 ixfp7n60p3.pdf
Advance Technical InformationPolar3 TM HiPerFETTM VDSS = 600VIXFA7N60P3Power MOSFETs ID25 = 7AIXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263 AA (IXFA)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 600 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 600 VTO-220AB
Datasheet: IXFA230N075T2 , IXFA230N075T2-7 , IXFA3N120 , IXFA3N80 , IXFA4N100P , IXFA4N100Q , IXFA5N100P , IXFA6N120P , IRF9640 , IXFA7N100P , IXFA7N80P , IXFB100N50P , IXFB100N50Q3 , IXFB110N60P3 , IXFB120N50P2 , IXFB132N50P3 , IXFB170N30P .
History: FQA13N80-F109
Keywords - IXFA76N15T2 MOSFET datasheet
IXFA76N15T2 cross reference
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History: FQA13N80-F109
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