IXFA7N100P MOSFET Datasheet: N-Ch, 1000V, 7A. Full specification with pinout and replacement list

IXFA7N100P Specs and Replacement

Type Designator: IXFA7N100P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 300 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO263

IXFA7N100P substitution

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IXFA7N100P datasheet

8.1. Size:159K ixys
ixfa7n60p3 ixfp7n60p3.pdf pdf_icon

Advance Technical Information Polar3 TM HiPerFETTM VDSS = 600V IXFA7N60P3 Power MOSFETs ID25 = 7A IXFP7N60P3 RDS(on) 1.15 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 150 C 600 V D (Tab) VDGR TJ = 25 C to 150 C, RGS = 1M 600 V TO-220AB ... See More ⇒

9.1. Size:180K ixys
ixfa76n15t2 ixfp76n15t2.pdf pdf_icon

Advance Technical Information TrenchT2TM HiperFETTM VDSS = 150V IXFA76N15T2 ID25 = 76A Power MOSFET IXFP76N15T2 RDS(on) 20m N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXFA) Fast Intrnsic Rectifier G S Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25 C to 175 C 150 V TO-220AB (IXFP) VDGR TJ = 25 C to 175 C, RGS = 1M ... See More ⇒

Detailed specifications: IXFA230N075T2-7, IXFA3N120, IXFA3N80, IXFA4N100P, IXFA4N100Q, IXFA5N100P, IXFA6N120P, IXFA76N15T2, EMB04N03H, IXFA7N80P, IXFB100N50P, IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3, IXFB170N30P, IXFB210N20P