IXFB110N60P3 MOSFET Datasheet: N-Ch, 600V, 110A. Full specification with pinout and replacement list

IXFB110N60P3 Specs and Replacement

Type Designator: IXFB110N60P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 250 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm

Package: PLUS264

IXFB110N60P3 substitution

- MOSFET ⓘ Cross-Reference Search

IXFB110N60P3 datasheet

9.1. Size:173K ixys
ixfb100n50p.pdf pdf_icon

IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30... See More ⇒

9.2. Size:109K ixys
ixfb150n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S Tab VGSS Continuous 30... See More ⇒

Detailed specifications: IXFA4N100Q, IXFA5N100P, IXFA6N120P, IXFA76N15T2, IXFA7N100P, IXFA7N80P, IXFB100N50P, IXFB100N50Q3, AO4407A, IXFB120N50P2, IXFB132N50P3, IXFB170N30P, IXFB210N20P, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P