IXFB120N50P2 Datasheet and Replacement
Type Designator: IXFB120N50P2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 300 nC
tr ⓘ - Rise Time: 300 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: PLUS264
IXFB120N50P2 substitution
IXFB120N50P2 Datasheet (PDF)
ixfb100n50p.pdf
IXFB 100N50PVDSS = 500 VPolarHVTM HiPerFETID25 = 100 APower MOSFET RDS(on) 49 m N-Channel Enhancement Modetrr 200 nsAvalanche RatedFast Intrinsic DiodeSymbol Test Conditions Maximum Ratings PLUS264TM (IXFB)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30
ixfb150n65x2.pdf
Advance Technical InformationX2-Class HiPerFETTM VDSS = 650VIXFB150N65X2Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodePLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDVDGR TJ = 25C to 150C, RGS = 1M 650 VSTabVGSS Continuous 30
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