IXFB170N30P MOSFET Datasheet: N-Ch, 300V, 170A. Full specification with pinout and replacement list

IXFB170N30P Specs and Replacement

Type Designator: IXFB170N30P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 170 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: PLUS264

IXFB170N30P substitution

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IXFB170N30P datasheet

9.1. Size:173K ixys
ixfb100n50p.pdf pdf_icon

IXFB 100N50P VDSS = 500 V PolarHVTM HiPerFET ID25 = 100 A Power MOSFET RDS(on) 49 m N-Channel Enhancement Mode trr 200 ns Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings PLUS264TM (IXFB) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30... See More ⇒

9.2. Size:109K ixys
ixfb150n65x2.pdf pdf_icon

Advance Technical Information X2-Class HiPerFETTM VDSS = 650V IXFB150N65X2 Power MOSFET ID25 = 150A RDS(on) 17m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S Tab VGSS Continuous 30... See More ⇒

Detailed specifications: IXFA76N15T2, IXFA7N100P, IXFA7N80P, IXFB100N50P, IXFB100N50Q3, IXFB110N60P3, IXFB120N50P2, IXFB132N50P3, AO4468, IXFB210N20P, IXFB300N10P, IXFB30N120P, IXFB38N100Q2, IXFB40N110P, IXFB44N100P, IXFB44N100Q3, IXFB50N80Q2