All MOSFET. IXFB44N100P Datasheet

 

IXFB44N100P MOSFET. Datasheet pdf. Equivalent


   Type Designator: IXFB44N100P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 44 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 305 nC
   trⓘ - Rise Time: 300 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: PLUS264

 IXFB44N100P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IXFB44N100P Datasheet (PDF)

 9.1. Size:137K  ixys
 ixfb40n110q3.pdf

IXFB44N100P IXFB44N100P

Preliminary Technical InformationHiperFETTM VDSS = 1100VIXFB40N110Q3Power MOSFET ID25 = 40A Q3-Class RDS(on) 260m N-Channel Enhancement ModeFast Intrinsic RectifierPLUS264TMSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1100 VGVDGR TJ = 25C to 150C, RGS = 1M 1100 VDSVGSS Continuous 30 VTabVGS

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